Improving single-mode VCSEL performance by introducing a long monolithic cavity

Author

Unold, H.J. ; Mahmoud, S.W.Z. ; Jager, R. ; Kicherer, M. ; Riedl, M.C. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

12

Issue

8

fYear

2000

Firstpage

939

Lastpage

941

Abstract

We report on the improvement of several selectively oxidized vertical-cavity surface emitting laser characteristics by introducing a long monolithic cavity. The samples compared are grown with various cavity lengths using solid-source MBE. The 980 nm-regime is chosen as emission wavelength to facilitate growth by using binary GaAs cavity spacers. A record high single-transverse mode output power of 5 mW at a series resistance of 98 /spl Omega/ is obtained for a 7-μm aperture device with a 4-μm cavity spacer. Using an 8-μm cavity spacer, devices up to 16-μm aperture diameter emit 1.7 mW of single-mode power with a full-width at half-maximum far-field angle below 3.8/spl deg/.

Keywords

distributed Bragg reflector lasers; laser beams; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical fabrication; semiconductor lasers; surface emitting lasers; 1.7 mW; 16 mum; 4 mum; 5 mW; 7 mum; 8 mum; 98 ohm; 980 nm; GaAs; aperture device; aperture diameter; binary GaAs cavity spacers; cavity lengths; cavity spacer; emission wavelength; full-width at half-maximum far-field angle; long monolithic cavity; monolithic cavity; selectively oxidized vertical-cavity surface emitting laser characteristics; series resistance; single-mode VCSEL performance; single-mode power; single-transverse mode output power; solid-source MBE; Apertures; Chemical lasers; Laser modes; Optical resonators; Optical surface waves; Power generation; Semiconductor lasers; Surface emitting lasers; Thermal resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.867967

Filename

867967