Title :
An 850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311)B substrate with high-polarization stability
Author :
Tadanaga, Osamu ; Tateno, Kouta ; Uenohara, Hiroyuki ; Kagawa, Toshiaki ; Amano, Chikara
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
The polarization stability of 850-nm InAlGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) grown on GaAs (311)B substrate was investigated by comparing it with that of GaAs unstrained QW VCSEL grown on GaAs (311)B substrate. Photoluminescence measurement showed that strained QWs grown on GaAs (311)B substrate had larger anisotropy in optical gain than unstrained QWs. The VCSEL with strained QWs showed an orthogonal polarization suppression ratio (OPSR) as high as 21 dB under CW operation. Time-dependent OPSR measurement indicated that the strained QW VCSEL had higher polarization stability than the unstrained QW VCSEL under zero-bias modulation.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser stability; optical fabrication; optical modulation; photoluminescence; quantum well lasers; surface emitting lasers; 850 nm; CW operation; GaAs; GaAs (311)B substrate; GaAs unstrained quantum well VCSEL; InAlGaAs; high-polarization stability; optical gain; orthogonal polarization suppression ratio; photoluminescence measurement; polarization stability; strained quantum-well vertical-cavity surface-emitting laser; time-dependent orthogonal polarization suppression ratio measurement; zero-bias modulation; Anisotropic magnetoresistance; Gain measurement; Gallium arsenide; Laser stability; Optical polarization; Photoluminescence; Quantum well lasers; Quantum wells; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
