An 850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311)B substrate with high-polarization stability

Author

Tadanaga, Osamu ; Tateno, Kouta ; Uenohara, Hiroyuki ; Kagawa, Toshiaki ; Amano, Chikara

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

Volume

12

Issue

8

fYear

2000

Firstpage

942

Lastpage

944

Abstract

The polarization stability of 850-nm InAlGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) grown on GaAs (311)B substrate was investigated by comparing it with that of GaAs unstrained QW VCSEL grown on GaAs (311)B substrate. Photoluminescence measurement showed that strained QWs grown on GaAs (311)B substrate had larger anisotropy in optical gain than unstrained QWs. The VCSEL with strained QWs showed an orthogonal polarization suppression ratio (OPSR) as high as 21 dB under CW operation. Time-dependent OPSR measurement indicated that the strained QW VCSEL had higher polarization stability than the unstrained QW VCSEL under zero-bias modulation.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser stability; optical fabrication; optical modulation; photoluminescence; quantum well lasers; surface emitting lasers; 850 nm; CW operation; GaAs; GaAs (311)B substrate; GaAs unstrained quantum well VCSEL; InAlGaAs; high-polarization stability; optical gain; orthogonal polarization suppression ratio; photoluminescence measurement; polarization stability; strained quantum-well vertical-cavity surface-emitting laser; time-dependent orthogonal polarization suppression ratio measurement; zero-bias modulation; Anisotropic magnetoresistance; Gain measurement; Gallium arsenide; Laser stability; Optical polarization; Photoluminescence; Quantum well lasers; Quantum wells; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.867968

Filename

867968