Title :
150 nm-gate p-channel MOSFET fabrication using laser annealing
Author_Institution :
Res. Centre, Sony Corp., Kanagawa, Japan
fDate :
2/19/1998 12:00:00 AM
Abstract :
A selective laser annealing (SELA) technique was applied to fabricate 150 nm gate p-channel MOSFETs for the first time. Boron atoms in the lightly doped drain and source/drain were activated without diffusion using SELA. No punch-through effect was seen and normal transistor operation was obtained for 150 nm-gate MOSFETs. A steep subthreshold slope (S-factor) of 88.7 mV/dec and a very low leakage current were obtained
Keywords :
MOSFET; boron; doping profiles; laser beam annealing; leakage currents; 150 nm; 150 nm-gate; B atom activation; MOSFET fabrication; PMOSFET; S-factor; Si:B; low leakage current; normal transistor operation; p-MOSFET; p-channel MOSFET; selective laser annealing technique; subthreshold slope;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980339
