Title :
AlSb/InAs HEMTs using modulation InAs(Si)doping
Author :
Boos, J.B. ; Bennett, B.R. ; Kruppa, W. ; Park, D. ; Yang, M.J. ; Shanabrook, B.V.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
2/19/1998 12:00:00 AM
Abstract :
AlSb/InAs HEMTs have been fabricated using Si-doping in a very thin (9 A) InAs layer located in the upper AlSb barrier. Quantum Hall measurements show that there is no parallel channel. Devices with a 0.5 μm gate length exhibit a drain current density of >1 A/mm and an f TLg product of 30 GHz μm at V(DS)=0.4 V after correction for the gate bonding pad capacitance
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; semiconductor doping; silicon; 0.5 micron; 9 A; AlSb-InAs:Si; HEMTs; drain current density; fabrication; modulation doping; quantum Hall measurements; thin InAs layer; upper AlSb barrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980219
