• DocumentCode
    1379918
  • Title

    Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

  • Author

    Jong, F.C. ; Huang, T.Y. ; Chao, T.S. ; Lin, H.C. ; Wang, M.F. ; Chang, C.Y.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    34
  • Issue
    4
  • fYear
    1998
  • fDate
    2/19/1998 12:00:00 AM
  • Firstpage
    404
  • Lastpage
    406
  • Abstract
    The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N 2O-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed
  • Keywords
    MOSFET; annealing; dielectric thin films; nitridation; nitrogen compounds; N2O; N2O annealing step; N2O-annealed sacrificial oxide; n-channel MOSFET; nMOSFETs; reverse short-channel effects; short-channel effect suppression;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980207
  • Filename
    675735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1379918