• DocumentCode
    1379925
  • Title

    GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells

  • Author

    Li, W. ; Lammasniemi, J. ; Kazantsev, A.B. ; Jaakkola, R. ; Mäkelä, T. ; Pessa, M.

  • Author_Institution
    Dept. of Phys., Tampere Univ., Finland
  • Volume
    34
  • Issue
    4
  • fYear
    1998
  • fDate
    2/19/1998 12:00:00 AM
  • Firstpage
    406
  • Lastpage
    407
  • Abstract
    A GaInP/AlInP tunnel diode has been grown by a gas-source molecular beam epitaxy method. A high conductance of 15 mA/cm2 at 2.7 mV has been achieved. Using closely optimised growth conditions very high carrier concentrations, both in GaInP and AlInP have been obtained
  • Keywords
    gallium compounds; 2.7 mV; GaInP-AlInP; GaInP-AlInP tunnel junction; GaInP-GaAs; GaInP-GaAs tandem solar cells; gas-source MBE; high carrier concentrations; molecular beam epitaxy method; optimised growth conditions; tunnel diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980324
  • Filename
    675736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1379925