DocumentCode
1379933
Title
Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting
Author
Tong, Q.-Y. ; Lee, T.-H. ; Huang, L.-J. ; Chao, Y.-L. ; Gösele, U.
Volume
34
Issue
4
fYear
1998
fDate
2/19/1998 12:00:00 AM
Firstpage
407
Lastpage
408
Abstract
High quality Si and SIC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H-implantation temperatures
Keywords
elemental semiconductors; hydrogen; ion implantation; semiconductor materials; silicon; silicon compounds; wafer bonding; 400 C; 800 C; H-implantation temperature; Si; Si layer transfer; Si substrate; Si-Si; SiC layer transfer; SiC-Si; glass substrate; high temperature H implantation; lower temperature layer splitting; wafer bonding;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980295
Filename
675737
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