Title :
Transfer of 3 in GaAs film on silicon substrate by proton implantation process
Author :
Jalaguier, E. ; Aspar, B. ; Pocas, S. ; Michaud, J.F. ; Zussy, M. ; Papon, A.M. ; Bruel, M.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fDate :
2/19/1998 12:00:00 AM
Abstract :
For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved by proton implantation and wafer bonding. Successful transfers of 3 in GaAs film are presented
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; wafer bonding; 3 in; GaAs film transfer; GaAs-Si; Si; Si substrate; proton implantation process; thin monocrystalline GaAs film; wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980265
