DocumentCode
1379940
Title
Transfer of 3 in GaAs film on silicon substrate by proton implantation process
Author
Jalaguier, E. ; Aspar, B. ; Pocas, S. ; Michaud, J.F. ; Zussy, M. ; Papon, A.M. ; Bruel, M.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Volume
34
Issue
4
fYear
1998
fDate
2/19/1998 12:00:00 AM
Firstpage
408
Lastpage
409
Abstract
For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved by proton implantation and wafer bonding. Successful transfers of 3 in GaAs film are presented
Keywords
III-V semiconductors; gallium arsenide; ion implantation; wafer bonding; 3 in; GaAs film transfer; GaAs-Si; Si; Si substrate; proton implantation process; thin monocrystalline GaAs film; wafer bonding;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980265
Filename
675738
Link To Document