Title :
V-band high-power/low-voltage InGaAs/InP composite channel HEMTs
Author :
Chevalier, P. ; Wallart, Xavier ; Bonte, B. ; Fauquembergue, R.
Author_Institution :
Inst. d´Electron. et de Microelectron. du Nord, UMR-CNRS, Villeneuve d´Ascq
fDate :
2/19/1998 12:00:00 AM
Abstract :
The authors have developed 0.15 μm gate length InAlAs/InGaAs/InP composite channel HEMTs with state-of-the-art power performance at 60 GHz. An output power of 355 mW/mm was obtained with 6.2 dB linear power gain and 12% power-added efficiency at a drain voltage of 2.5 V
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; 0.15 micron; 12 percent; 2.5 V; 6.2 dB; 60 GHz; EHF; InAlAs-InGaAs-InP; InGaAs/InP composite channel HEMTs; MM-wave device; V-band; high-power device; low-voltage operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980254
