InGaAsSb-AlGaAsSb distributed-feedback lasers emitting at 1.72 μm

Author

Werner, R. ; Bleuel, T. ; Hofmann, J. ; Brockhaus, M. ; Forchel, A.

Author_Institution

Dept. of Tech. Phys., Wurzburg Univ., Germany

Volume

12

Issue

8

fYear

2000

Firstpage

966

Lastpage

968

Abstract

We have developed distributed-feedback ridge waveguide lasers based on AlGa(In)AsSb emitting at 1.72 μm. The distributed feedback is obtained by first-order Cr-Bragg gratings defined on both sides of the laser ridge. The threshold current under pulsed operation at room temperature was around 180 mA and an output power of 1.5 mW was obtained. The gratings lead to a side-mode suppression ratio of 27 dB.

Keywords

Bragg gratings; III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; laser modes; molecular beam epitaxial growth; optical fabrication; ridge waveguides; semiconductor lasers; waveguide lasers; 1.5 mW; 1.72 mum; 180 mA; 25 C; InGaAsSb-AlGaAsSb; distributed feedback; distributed-feedback lasers; distributed-feedback ridge waveguide lasers; first-order Cr-Bragg gratings; gratings; laser ridge; output power; pulsed operation; room temperature; side-mode suppression ratio; threshold current; Distributed feedback devices; Gas lasers; Gratings; Laser feedback; Laser modes; Laser transitions; Optical materials; Semiconductor lasers; Temperature; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.867976

Filename

867976