Title :
All-active InGaAsP-InP optical tapered-amplifier 1 x N power splitters
Author :
Choi, S.S. ; Donnelly, J.P. ; Groves, S.H. ; Reeder, R.E. ; Bailey, R.J. ; Taylor, P.J. ; Napoleone, A. ; Goodhue, W.D.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
All-active tapered-amplifier power splitters (TAPS) consisting of a single-mode input waveguide, which acts as a preamplifier, a two-dimensional (2-D) diffraction section, which amplifies the signal during the splitting process, and N single-mode output waveguides, which act as post-amplifiers, were fabricated in 1.3-μm InGaAsP quantum-well material. Gains in each output guide (power out of guide/input power) of greater than 10 dB with a uniformity of better than 0.5 dB from guide to guide were measured on a 1×8 TAPS device.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; laser modes; optical beam splitters; optical fabrication; quantum well lasers; ridge waveguides; semiconductor optical amplifiers; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; 1/spl times/8 TAPS device; 1/spl times/N power splitters; InGaAsP; InGaAsP quantum-well material; InGaAsP-InP; all-active tapered-amplifier power splitters; gains; input power; optical tapered-amplifier 1/spl times/N power splitters; output guide; post-amplifiers; preamplifier; single-mode input waveguide; single-mode output waveguides; splitting process; two-dimensional diffraction section; uniformity; Gain measurement; Optical diffraction; Optical materials; Optical waveguides; Power measurement; Preamplifiers; Quantum well devices; Signal processing; Stimulated emission; Two dimensional displays;
Journal_Title :
Photonics Technology Letters, IEEE
