In Flight SEU/MCU Sensitivity of Commercial Nanometric SRAMs: Operational Estimations

Author

Artola, Laurent ; Velazco, Raoul ; Hubert, Guillaume ; Duzellier, Sophie ; Nuns, Thierry ; Guerard, Bruno ; Peronnard, Paul ; Mansour, Wassim ; Pancher, Fabrice ; Bezerra, Francoise

Author_Institution

ONERA, French Aerosp. Lab., Toulouse, France

Volume

58

Issue

6

fYear

2011

Firstpage

2644

Lastpage

2651

Abstract

A method and the corresponding platform devoted to operational SEE-rate prediction are presented and illustrated by experimental results. Predicted error-rates are in well agreement with results issued from the activation of an SRAM platform, in 90 nm technology node, on board stratospheric balloons flights. Direct ionization of protons is investigated for a 65 SRAM memory virtually boarded on the balloon flight.

Keywords

SRAM chips; balloons; proton effects; SEU-MCU densitivity; SRAM memory; SRAM platform activation; balloon flight; board stratospheric balloons; commercial nanometric SRAMs; error rates; multiple cell upsets; operational SEE-rate prediction; proton ionization; single event effects; single event upsets; size 90 nm; technology node; Integrated circuit modeling; Neutrons; Protons; SRAM chips; Sensitivity; Single event upset; Testing; Experimental cross-section measurement; in flight experiment; multiple Cell Upset; operational prediction; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2172220

Filename

6084843