Generation of millimeter waves by photomixing at 1.55 μm using InGaAs-InAlAs-InP velocity-matched distributed photodetectors

Author

Chau, T. ; Kaneda, N. ; Jung, T. ; Rollinger, A. ; Mathai, S. ; Qian, Y. ; Itoh, T. ; Wu, M.C. ; Shillue, W.P. ; Payne, J.M.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

12

Issue

8

fYear

2000

Firstpage

1055

Lastpage

1057

Abstract

Millimeter-wave generation by photomixing at 1.55 μm in long-wavelength velocity-matched distributed photodetector (VMDP) is experimentally demonstrated. The VMDP exhibits a dc responsivity of 0.25 A/W, a breakdown voltage of 7-9 V, and up to 15-mA dc photocurrent without damage. Millimeter-wave output powers of -21 dBm at 75 GHz and -24 dBm at 95 GHz were measured.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave generation; optical communication equipment; photodetectors; 1.55 mum; 15 mA; 7 to 9 V; 75 GHz; 95 GHz; InGaAs-InAlAs-InP; InGaAs-InAlAs-InP velocity-matched distributed photodetectors; breakdown voltage; dc photocurrent; dc responsivity; millimeter wave generation; millimeter-wave output powers; photomixing; Millimeter wave communication; Millimeter wave measurements; Millimeter wave technology; Optical arrays; Optical mixing; Optical waveguides; Photoconductivity; Photodetectors; Photodiodes; Radio astronomy;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.868006

Filename

868006