A 3.2 GHz 26 dB wide-band monolithic matched GaAs MESFET feedback amplifier using cascodes

Author

Colleran, William T. ; Abidi, Asad A.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

36

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1377

Lastpage

1385

Abstract

Feedback around cascode stages is demonstrated to be a useful means of making matched direct coupled amplifiers with higher bandwidths than afforded by conventional common-source topologies. Design techniques are described for an amplifier which is capable of operation to DC and which exhibits a measured gain of 26 dB, a 3.2 GHz bandwidth, and a 2.5:1 VSWR in a 1-μm GaAs MESFET process. A novel adjustment scheme is introduced whereby the amplifier´s frequency response can be modified using a DC bias voltage to ensure stable circuit operation in spite of MESFET modeling inaccuracies and GaAs processing variations

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; feedback; field effect integrated circuits; frequency response; gallium arsenide; microwave amplifiers; wideband amplifiers; 0 to 3.2 GHz; 1 micron; 26 dB; 3.2 GHz; DC bias voltage; GaAs; III-V semiconductors; MESFET; MMIC; adjustment scheme; cascode stages; feedback amplifier; frequency response; matched direct coupled amplifiers; stable circuit operation; wideband monolithic amplifier; Bandwidth; Broadband amplifiers; Feedback; Frequency response; Gain measurement; Gallium arsenide; MESFETs; Operational amplifiers; Topology; Wideband;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.6085

Filename

6085