Title :
Planar InP/InGaAs avalanche photodetector with gain-bandwidth product in excess of 100 GHz
Author_Institution :
Adv. Technol. Lab., Bell Northern Res. Ltd., Ottawa, Ont., Canada
Abstract :
A planar separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiode (APD) structure was fabricated, allowing for a thin undoped multiplication layer, without the use of guard rings. A gain-bandwidth (GBW) product in excess of 100 GHz has been measured for the first time.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; InP-InGaAs; avalanche photodetector; avalanche photodiode; charge; gain-bandwidth product; grading; planar APD; separate absorption; thin undoped multiplication layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910023
