DocumentCode :
1380339
Title :
Very high current gain InGaAs/InP heterojunction bipolar transistors grown by metalorganic chemical vapour deposition
Author :
Kyono, C.S. ; Gerrard, N.D. ; Pinzone, C.J. ; Maziar, C.M. ; Dupuis, R.D.
Author_Institution :
Texas Univ., Austin, TX, USA
Volume :
27
Issue :
1
fYear :
1991
Firstpage :
40
Lastpage :
41
Abstract :
A maximum DC current gain ( beta ) of 2.4*104 and small-signal current gain (hfe) of 4.9*104 were obtained for InGaAs/InP heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). The excellent HBT gain performance is attributed to the exceptional material quality, the good control over p-type dopant diffusion at the base-emitter heterojunction and the existence of a doping-induced drift field in the base.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; vapour phase epitaxial growth; HBT; HBT gain performance; InGaAs-InP; MOCVD; base-emitter heterojunction; doping-induced drift field; heterojunction bipolar transistors; metalorganic chemical vapour deposition; p-type dopant diffusion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910026
Filename :
60854
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1380339
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