Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits

Author

Glass, Elizabeth C. ; Huang, Jenn-Hwa ; Staudinger, Joseph ; Shields, Michael ; Martinez, Marino John ; Hartin, Olin L. ; Valentine, Wendy ; Lan, Ellen

Author_Institution

Semicond. Product Sector, Motorola Inc., Tempe, AZ, USA

Volume

35

Issue

9

fYear

2000

Firstpage

1276

Lastpage

1284

Abstract

Single-supply power amplifiers have become the new paradigm in portable phone handsets due to the recent availability of heterojunction bipolar transistor (HBT) and pseudo enhancement mode PHEMT technology. We have developed a true enhancement mode heterostructure insulated-gate FET device (HIGFET) which is suitable for use in both saturated and linear power amplifiers. A three-stage power amplifier designed for 1900-MHz NADC application delivered +30-dBm output power and 41.7% power-added efficiency with an adjacent channel power of -29.8 dBc and alternate adjacent channel power of -48.4 dBc. In addition to this, we have demonstrated excellent noise figure and linearity performance for small-signal applications. At 900 MHz and bias conditions V/sub DS/=1.0 V and I/sub DSQ/=1 mA, a single-stage amplifier achieved a noise figure of 1.17 dB with an associated gain of 18.5 dB. These results make the technology an ideal candidate for application in both transmitter and receiver circuits.

Keywords

JFET integrated circuits; UHF integrated circuits; UHF power amplifiers; mobile radio; telephone sets; 1.17 dB; 18.5 dB; 1900 MHz; 41.7 percent; 900 MHz; NADC; enhancement mode HIGFET technology; portable phone handset; receiver circuit; single-supply power amplifier; transmitter circuit; wireless subscriber; FETs; Gain; Heterojunction bipolar transistors; Insulation; Linearity; Noise figure; PHEMTs; Power amplifiers; Power generation; Telephone sets;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.868036

Filename

868036