Title :
Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates
Author :
Whelan, Colin S. ; Marsh, Phil F. ; Hoke, William E. ; McTaggart, Rebecca A. ; Lyman, Peter S. ; Lemonias, Peter J. ; Lardizabal, Steven M. ; Leoni, Robert E., III ; Lichwala, Steven J. ; Kazior, Thomas E.
Author_Institution :
Raytheon Co., Andover, MA, USA
Abstract :
This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated <1.4-dB noise figure with 16 dB of gain and <1.7 with 26 dB of gain, respectively. The 32% In MHEMT device has overcome the <3.5-V drain bias limitation of other MHEMT power devices, showing a power density of 650 mW/mm at 35 GHz, with V/sub ds/=6 V.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimeter wave power amplifiers; 0.61 dB; 16 dB; 26 GHz; 26 dB; 35 GHz; III-V semiconductors; InGaAs-GaAs; Ka-band; MHEMT technology; channel metamorphic technology; drain bias limitation; low-noise amplifiers; metamorphic HEMT amplifiers; millimeter-wave power amplifiers; power density; Circuits; Gain; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; Low-noise amplifiers; Millimeter wave technology; Noise figure; mHEMTs;
Journal_Title :
Solid-State Circuits, IEEE Journal of
