DocumentCode :
1380554
Title :
Unipolar Switching Behaviors of RTO 
RRAM
Author :
Chien, W.C. ; Chen, Y.C. ; Lai, E.K. ; Yao, Y.D. ; Lin, P. ; Horng, S.F. ; Gong, J. ; Chou, T.H. ; Lin, H.M. ; Chang, M.N. ; Shih, Y.H. ; Hsieh, K.Y. ; Liu, R. ; Lu, Chih-Yuan
Author_Institution :
Macronix Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan
Volume :
31
Issue :
2
fYear :
2010
Firstpage :
126
Lastpage :
128
Abstract :
The microstructure and electrical properties of the WOX -based resistive random access memory are investigated in this letter. The WOX layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOX layer and result in a low initial resistance. This letter studies the unipolar operation- the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 107 times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.
Keywords :
CMOS memory circuits; atomic force microscopy; oxidation; random-access storage; reliability; tungsten compounds; CMOS-compatible rapid thermal oxidation process; RTO WOX RRAM; WOX-based resistive random access memory; WOx; conductive atomic force microscopy; electrical properties; high-density applications; low programming voltages; microstructure; nanoscale conducting channels; programming; reading; reliability; unipolar operation; unipolar switching property; Embedded memory; resistive random access memory (RRAM); tungsten oxide; unipolar operation;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2037593
Filename :
5378576
Link To Document :
