Title :
Wideband on-wafer noise measurement setup for noise characterization of active devices in the low VHF band
Author :
Roux, Jean-Philippe ; Escotte, Laurent ; Plana, Robert ; Graffeuil, Jacques
Author_Institution :
LAAS-CNRS, Toulouse, France
fDate :
10/1/1997 12:00:00 AM
Abstract :
This paper addresses a new wideband on-wafer measurement test set designed for noise characterization of microwave active devices over the frequency range of 300 kHz to 150 MHz. Noise parameters obtained from the multiple impedance technique on a GaAlAs/GaAs heterojunction bipolar transistor (HBT) from 300 kHz to 70 MHz are reported and compared with low-frequency noise data. Investigation of the excess noise sources of III-V HBT´s is performed well above the 100 kHz frequency limit of standard dynamic signal analyzers and noise modeling of these devices is reported
Keywords :
III-V semiconductors; VHF devices; aluminium compounds; electric noise measurement; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor device testing; 300 kHz to 70 MHz; GaAlAs-GaAs; active devices; excess noise sources; heterojunction bipolar transistor; low VHF band; multiple impedance technique; noise characterization; noise modeling; on-wafer noise measurement; Active noise reduction; Frequency measurement; Heterojunction bipolar transistors; Impedance; Low-frequency noise; Microwave devices; Microwave measurements; Noise measurement; Testing; Wideband;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
