DocumentCode
1380633
Title
Strained Active Regions in GaAs-based Quantum Cascade Lasers
Author
Triplett, Gregory ; Roberts, Denzil
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Missouri-Columbia, Columbia, MO, USA
Volume
46
Issue
12
fYear
2010
Firstpage
1782
Lastpage
1787
Abstract
This paper explores the effects of low indium concentration in deep-well AlGaAs/GaAs quantum cascade laser structures. Photon emission from these strained active regions involves nonlinear optical processes, which reduce the emission wavelength. Designs that incorporate strain in one and two wells of the active region, respectively, on (111) GaAs are compared. Results demonstrate wavelength extendibility in compressively strained deep-well GaAs-based devices.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optical susceptibility; quantum cascade lasers; (111) GaAs surface; AlGaAs-GaAs; compressively strained quantum cascade lasers; deep-well quantum cascade laser; nonlinear susceptibility; photon emission; Gallium arsenide; Laser transitions; Oscillators; Quantum cascade lasers; Spectroscopy; Strain; Infrared spectroscopy; optical propagation in nonlinear media; quantum well devices; semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2010.2071854
Filename
5638343
Link To Document