Title :
Strained Active Regions in GaAs-based Quantum Cascade Lasers
Author :
Triplett, Gregory ; Roberts, Denzil
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Missouri-Columbia, Columbia, MO, USA
Abstract :
This paper explores the effects of low indium concentration in deep-well AlGaAs/GaAs quantum cascade laser structures. Photon emission from these strained active regions involves nonlinear optical processes, which reduce the emission wavelength. Designs that incorporate strain in one and two wells of the active region, respectively, on (111) GaAs are compared. Results demonstrate wavelength extendibility in compressively strained deep-well GaAs-based devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optical susceptibility; quantum cascade lasers; (111) GaAs surface; AlGaAs-GaAs; compressively strained quantum cascade lasers; deep-well quantum cascade laser; nonlinear susceptibility; photon emission; Gallium arsenide; Laser transitions; Oscillators; Quantum cascade lasers; Spectroscopy; Strain; Infrared spectroscopy; optical propagation in nonlinear media; quantum well devices; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2071854
