AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography

Author

Lo, H.M. ; Hsieh, Y.T. ; Shei, S.C. ; Lee, Y.C. ; Zeng, X.F. ; Weng, W.Y. ; Lin, N.M. ; Chang, S.J.

Author_Institution

Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

46

Issue

12

fYear

2010

Firstpage

1834

Lastpage

1839

Abstract

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of AlGaInP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.39, 2.29, 2.39, 2.24, 2.21, and 2.25-V while the 20 mA output powers were 1.43, 1.42, 1.38, 1.35, 1.28, 1.22, and 1.16 mW for CMEL-400-nm LED, CMEL-600-nm LED, CMEL-800-nm LED, CMEL-1-μm LED, CMEL-2-μm LED, CMEL-3-μm, and the conventional LED without CMEL, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; lithography; AlGaInP; GaP; LED; contact-transferred lithography; current 20 mA; current injection; forward voltages; mask-embedded lithography; texture window layer; wavelength 1 mum to 3 mum; wavelength 400 nm to 800 nm; Current measurement; Etching; Light emitting diodes; Lithography; Power generation; Surface morphology; AlGaInP; light-emitting diodes; nanoimprint;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2048742

Filename

5638356