GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GaInP:Fe regrowth

Author

Barrios, C.A. ; Messmer, E.R. ; Risberg, A. ; Carlsson, C. ; Halonen, J. ; Ghisoni, M. ; Larsson, A. ; Lourdudoss, S.

Author_Institution

Dept. of Electrons., R. Inst. of Technol., Stockholm, Sweden

Volume

36

Issue

18

fYear

2000

fDate

8/31/2000 12:00:00 AM

Firstpage

1542

Lastpage

1544

Abstract

The authors report the first results of a GaAs/AlGaAs buried heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga_0.51In_0.49P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GaInP:Fe around 15 μm diameter and 8 μm tall VCSEL mesas was carried out by hydride vapour phase epitaxy (HVPE). Under room temperature continuous wave (CW) operation, the device exhibited a threshold current of 3.5 mA, a differential quantum efficiency of 33% and a light output power of 4.2 mW. CW operation at temperatures up to 97°C is also demonstrated

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; optical fabrication; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 15 mum; 298 K; 3.5 mA; 33 percent; 4.2 mW; 8 mum; 97 C; CW operation; Ga_0.51In_0.49P:Fe; GaAs-AlGaAs; GaAs/AlGaAs; GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser; GaInP:Fe; VCSEL; VCSEL mesas; buried heterostructure vertical-cavity surface-emitting laser; burying layer; differential quantum efficiency; hydride vapour phase epitaxy; light output power; regrowth; room temperature continuous wave operation; semi-insulating GaInP:Fe regrowth; temperatures; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001082

Filename

868100