Title :
Room-temperature long-wavelength (λ=13.3 μm) unipolar quantum dot intersubband laser
Author :
Krishna, S. ; Bhattacharya, P. ; McCann, P.J. ; Namjou, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
8/31/2000 12:00:00 AM
Abstract :
Long-wavelength (λ=13.3 μm) unipolar lasing at 283 K from self-organised In0.4Ga0.6As/GaAs quantum dots, due to intersubband transitions in the conduction band, is demonstrated for the first time. The threshold current density under continuous wave operation is 1.1 kA/cm2 for a 60 μm×1.2 mm broad-area plasmon-enhanced waveguide device and the maximum power output is ≈ μW. The long intersubband relaxation time in quantum dots, together with the short lifetime in the ground state, due to interband stimulated emission, help to achieve the necessary population inversion and gain
Keywords :
III-V semiconductors; conduction bands; current density; gallium arsenide; indium compounds; laser beams; laser transitions; population inversion; quantum well lasers; semiconductor quantum dots; stimulated emission; surface plasmons; waveguide lasers; 1 muW; 13.3 mum; 283 K; In0.4Ga0.6As-GaAs; In0.4Ga0.6As/GaAs quantum dots; broad-area plasmon-enhanced waveguide device; conduction band; continuous wave operation; gain; ground state; interband stimulated emission; intersubband relaxation time; intersubband transitions; lifetime; long-wavelength unipolar lasing; maximum power output; population inversion; quantum dots; room-temperature long-wavelength laser; self-organised quantum dots; threshold current density; unipolar quantum dot intersubband laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001095
