Room-temperature long-wavelength (λ=13.3 μm) unipolar quantum dot intersubband laser

Author

Krishna, S. ; Bhattacharya, P. ; McCann, P.J. ; Namjou, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

36

Issue

18

fYear

2000

fDate

8/31/2000 12:00:00 AM

Firstpage

1550

Lastpage

1551

Abstract

Long-wavelength (λ=13.3 μm) unipolar lasing at 283 K from self-organised In_0.4Ga_0.6As/GaAs quantum dots, due to intersubband transitions in the conduction band, is demonstrated for the first time. The threshold current density under continuous wave operation is 1.1 kA/cm² for a 60 μm×1.2 mm broad-area plasmon-enhanced waveguide device and the maximum power output is ≈ μW. The long intersubband relaxation time in quantum dots, together with the short lifetime in the ground state, due to interband stimulated emission, help to achieve the necessary population inversion and gain

Keywords

III-V semiconductors; conduction bands; current density; gallium arsenide; indium compounds; laser beams; laser transitions; population inversion; quantum well lasers; semiconductor quantum dots; stimulated emission; surface plasmons; waveguide lasers; 1 muW; 13.3 mum; 283 K; In_0.4Ga_0.6As-GaAs; In_0.4Ga_0.6As/GaAs quantum dots; broad-area plasmon-enhanced waveguide device; conduction band; continuous wave operation; gain; ground state; interband stimulated emission; intersubband relaxation time; intersubband transitions; lifetime; long-wavelength unipolar lasing; maximum power output; population inversion; quantum dots; room-temperature long-wavelength laser; self-organised quantum dots; threshold current density; unipolar quantum dot intersubband laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001095

Filename

868105