DocumentCode :
1380886
Title :
Metamorphic pin diodes for high isolation and low power consumption millimetre-wave switching MMICs
Author :
Ziegler, V. ; Deufel, R. ; Wölk, C. ; Gässler, C. ; Dickmann, J. ; Schumacher, H.
Author_Institution :
Res. Center, DaimlerChrysler, Ulm, Germany
Volume :
36
Issue :
18
fYear :
2000
fDate :
8/31/2000 12:00:00 AM
Firstpage :
1556
Lastpage :
1557
Abstract :
Two broadband millimetre-wave switching circuits using In0.52 Ga0.48As pin diodes grown on a GaAs substrate are presented. To the best of the authors knowledge, this is the first time that metamorphic pin diodes have been used for switching MMICs. The performances of the pin diodes are discussed and excellent RF results from a single pole single throw (SPST) and single pole double throw (SPDT) switch are demonstrated
Keywords :
p-i-n diodes; GaAs; In0.52Ga0.48As; isolation; metamorphic pin diodes; millimetre-wave switching MMICs; power consumption; single pole double throw switch; single pole single throw switch;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20001105
Filename :
868109
Link To Document :
بازگشت