• DocumentCode
    1380886
  • Title

    Metamorphic pin diodes for high isolation and low power consumption millimetre-wave switching MMICs

  • Author

    Ziegler, V. ; Deufel, R. ; Wölk, C. ; Gässler, C. ; Dickmann, J. ; Schumacher, H.

  • Author_Institution
    Res. Center, DaimlerChrysler, Ulm, Germany
  • Volume
    36
  • Issue
    18
  • fYear
    2000
  • fDate
    8/31/2000 12:00:00 AM
  • Firstpage
    1556
  • Lastpage
    1557
  • Abstract
    Two broadband millimetre-wave switching circuits using In0.52 Ga0.48As pin diodes grown on a GaAs substrate are presented. To the best of the authors knowledge, this is the first time that metamorphic pin diodes have been used for switching MMICs. The performances of the pin diodes are discussed and excellent RF results from a single pole single throw (SPST) and single pole double throw (SPDT) switch are demonstrated
  • Keywords
    p-i-n diodes; GaAs; In0.52Ga0.48As; isolation; metamorphic pin diodes; millimetre-wave switching MMICs; power consumption; single pole double throw switch; single pole single throw switch;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001105
  • Filename
    868109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1380886