DocumentCode :
1380926
Title :
Exposure Time Dependence of Dark Current in CCD Imagers
Author :
Widenhorn, Ralf ; Dunlap, Justin C. ; Bodegom, Erik
Author_Institution :
Portland State Univ., Portland, OR, USA
Volume :
57
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
581
Lastpage :
587
Abstract :
In this paper, we present a systematic study on the rate of dark current generation of two scientific charge-coupled device imagers. The dark current in both imagers was measured for exposure times from 5 to 7200 s at a constant temperature. As one would expect, the majority of pixels show a linear increase in dark count with exposure time. However, we found distinct groups of pixels that show a nonlinear dark current dependence versus exposure time well below saturation. Since the dark count is often assumed to scale linearly with exposure time, these pixels can pose a problem during dark current correction. We also discuss what could cause some pixels to produce a dark count that is linear versus exposure time whereas others do not.
Keywords :
CCD image sensors; CCD imagers; charge-coupled device imagers; dark current generation; Charge coupled devices; Current measurement; Dark current; Digital images; Heart; Impurities; Photonic band gap; Signal to noise ratio; Silicon; Temperature dependence; Charge-coupled devices (CCDs); dark current; exposure time nonlinearity; impurities;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2038649
Filename :
5378633
Link To Document :
بازگشت