DocumentCode :
1380940
Title :
Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates
Author :
Van Look, Jan-Robert ; Einfeldt, Sven ; Krüger, Olaf ; Hoffmann, Veit ; Knauer, Arne ; Weyers, Markus ; Vogt, Patrick ; Kneissl, Michael
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin, Germany
Volume :
22
Issue :
6
fYear :
2010
fDate :
3/15/2010 12:00:00 AM
Firstpage :
416
Lastpage :
418
Abstract :
In this letter, a novel method for the fabrication of high-quality facets for III-nitride lasers grown on c -plane sapphire substrates as well as on GaN substrates is presented. Based on a laser scribing process gain-guided laser diodes with smooth facets were fabricated, which showed threshold current densities of 6.5 kA/cm2 at an emission wavelength of 405 nm under pulsed operation.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser ablation; laser beam machining; optical fabrication; sapphire; semiconductor lasers; wide band gap semiconductors; Al2O3; GaN; InGaN; facet fabrication; gain guided laser diode; laser ablation; laser diodes; laser micromachining; laser scribing; multi diode laser; pulsed operation; wavelength 405 nm; Cleaved facets; GaN; III–nitrides; InGaN; laser ablation; laser diodes; laser micromachining; laser scribing; materials processing; sapphire; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2039995
Filename :
5378635
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1380940
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