Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates

Author

Van Look, Jan-Robert ; Einfeldt, Sven ; Krüger, Olaf ; Hoffmann, Veit ; Knauer, Arne ; Weyers, Markus ; Vogt, Patrick ; Kneissl, Michael

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin, Germany

Volume

22

Issue

6

fYear

2010

fDate

3/15/2010 12:00:00 AM

Firstpage

416

Lastpage

418

Abstract

In this letter, a novel method for the fabrication of high-quality facets for III-nitride lasers grown on c -plane sapphire substrates as well as on GaN substrates is presented. Based on a laser scribing process gain-guided laser diodes with smooth facets were fabricated, which showed threshold current densities of 6.5 kA/cm² at an emission wavelength of 405 nm under pulsed operation.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser ablation; laser beam machining; optical fabrication; sapphire; semiconductor lasers; wide band gap semiconductors; Al₂O₃; GaN; InGaN; facet fabrication; gain guided laser diode; laser ablation; laser diodes; laser micromachining; laser scribing; multi diode laser; pulsed operation; wavelength 405 nm; Cleaved facets; GaN; III–nitrides; InGaN; laser ablation; laser diodes; laser micromachining; laser scribing; materials processing; sapphire; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2039995

Filename

5378635