Title :
A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
Author :
Su, Nai-Chao ; Wang, Shui Jinn ; Chin, Albert
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/1/2010 12:00:00 AM
Abstract :
We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-??s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high- ?? layers.
Keywords :
II-VI semiconductors; amorphous semiconductors; flash memories; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; amorphous indium gallium zinc oxide thin-film transistor nonvolatile memory; extrapolated ten-year memory window; high-?? layers; nonvolatile charge-trapping-engineered flash memory; program-erase voltage; retention characteristics; voltage -12 V; voltage 1.2 V; voltage 10 V; Charge-trapping-engineered Flash (CTEF); InGaZnO; high- $kappa$; metal–oxide–nitride–oxide–semiconductor (MONOS); nonvolatile memory (NVM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2037986
