Electrical characteristics evolution of the Deep Trench Termination diode based on a finite elements simulation approach

Author

Baccar, F. ; Le Henaff, Francois ; Theolier, L. ; Azzopardi, Stephane ; Woirgard, Eric

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2014

fDate

7-9 April 2014

Firstpage

1

Lastpage

7

Abstract

The main contribution of this work consists in showing the possibility to use the Cyclotene 4026-46 BCB (BenzoCycloButen) resin in thick layer to realize Deep Trench Termination (DT²). The development of the DT² in power devices strongly depends on its reliability. 2D finite elements simulations were used to determinate the electrical characteristics after mechanical stresses created in the structure. It appears that void created inside the structure does not affect the structure´s characteristic; however it changes when a quantity of charge was added at interface Silicon/BCB.

Keywords

finite element analysis; passivation; power semiconductor diodes; resins; 2D finite elements simulations; benzocyclobuten resin; cyclotene 4026-46 BCB resin; deep trench termination diode; electrical characteristics evolution; finite elements simulation approach; interface silicon/BCB; mechanical stresses; power devices; structure characteristic; Abstracts; Anodes; Capacitance; Cathodes; Isothermal processes; Microelectronics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 2014 15th international conference on

Conference_Location

Ghent

Print_ISBN

978-1-4799-4791-1

Type

conf

DOI

10.1109/EuroSimE.2014.6813814

Filename

6813814