Thermal characteristics of SiC diode assembly to ceramic substrate

Author

Kisiel, Ryszard ; Guziewicz, M. ; Mysliwiec, Marcin ; Krasniewski, J. ; Janke, W.

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland

fYear

2014

fDate

7-9 April 2014

Firstpage

1

Lastpage

4

Abstract

Silicon carbide (SiC) semiconductor diodes are studied for high power and high temperature system applications. Our packaging technology is developing to ensure a working temperature above 300°C for Schottky and PIN diodes. This work presents an investigation on the thermal properties of proposed assembly of SiC die into a ceramic package. Ag micro particles and sintering process were used for the assembly. It was found that thermal resistance of such package is dependent on assembly technology and it is near 3 K/W for Schottky diode in the temperature range from room temperature up to 200°C, and the thermal resistance is in the range 10.5 ÷ 8.7 K/W for PIN diode at temperature in the range from 20°C up to 300°C.

Keywords

Schottky diodes; ceramic packaging; p-i-n diodes; silicon compounds; silver; thermal resistance; wide band gap semiconductors; Ag; Ag microparticles; PIN diodes; Schottky diodes; SiC; SiC diode assembly; ceramic package; ceramic substrate; high power system; high temperature system; packaging technology; semiconductor diodes; silicon carbide; sintering process; temperature 20 degC to 300 degC; thermal characteristics; thermal properties; thermal resistance; PIN photodiodes; Schottky diodes; Silicon carbide; Temperature; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 2014 15th international conference on

Conference_Location

Ghent

Print_ISBN

978-1-4799-4791-1

Type

conf

DOI

10.1109/EuroSimE.2014.6813818

Filename

6813818