Title :
Thermal characteristics of SiC diode assembly to ceramic substrate
Author :
Kisiel, Ryszard ; Guziewicz, M. ; Mysliwiec, Marcin ; Krasniewski, J. ; Janke, W.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
Silicon carbide (SiC) semiconductor diodes are studied for high power and high temperature system applications. Our packaging technology is developing to ensure a working temperature above 300°C for Schottky and PIN diodes. This work presents an investigation on the thermal properties of proposed assembly of SiC die into a ceramic package. Ag micro particles and sintering process were used for the assembly. It was found that thermal resistance of such package is dependent on assembly technology and it is near 3 K/W for Schottky diode in the temperature range from room temperature up to 200°C, and the thermal resistance is in the range 10.5 ÷ 8.7 K/W for PIN diode at temperature in the range from 20°C up to 300°C.
Keywords :
Schottky diodes; ceramic packaging; p-i-n diodes; silicon compounds; silver; thermal resistance; wide band gap semiconductors; Ag; Ag microparticles; PIN diodes; Schottky diodes; SiC; SiC diode assembly; ceramic package; ceramic substrate; high power system; high temperature system; packaging technology; semiconductor diodes; silicon carbide; sintering process; temperature 20 degC to 300 degC; thermal characteristics; thermal properties; thermal resistance; PIN photodiodes; Schottky diodes; Silicon carbide; Temperature; Temperature measurement; Thermal resistance;
Conference_Titel :
Thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 2014 15th international conference on
Conference_Location :
Ghent
Print_ISBN :
978-1-4799-4791-1
DOI :
10.1109/EuroSimE.2014.6813818
