DocumentCode
1381322
Title
A fatigue-free silicon device structure
Author
Green, W. B.
Author_Institution
Westinghouse Electric Corporation, Young wood, Pa.
Volume
80
Issue
2
fYear
1961
fDate
5/1/1961 12:00:00 AM
Firstpage
186
Lastpage
192
Abstract
Germanium devices, when correctly used, are capable of essentially infinite life. It was commonly assumed in early higher temperature semiconductor work that silicon devices and those of materials, such as silicon carbide and III-V compounds would have similar life expectancy. That this is not realized in soft-soldered silicon devices is now well established. Evidence is presented to show that this limitation in life is due to fatigue rupture of the soft-soldered joints when they are subjected to cyclic thermal stress. A new hard-soldered structure is described which has been proved by long experience to eliminate fatigue failure completely.
Keywords
Copper; Fatigue; Joints; Junctions; Silicon; Stress;
fLanguage
English
Journal_Title
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher
ieee
ISSN
0097-2452
Type
jour
DOI
10.1109/TCE.1961.6373099
Filename
6373099
Link To Document