• DocumentCode
    1381322
  • Title

    A fatigue-free silicon device structure

  • Author

    Green, W. B.

  • Author_Institution
    Westinghouse Electric Corporation, Young wood, Pa.
  • Volume
    80
  • Issue
    2
  • fYear
    1961
  • fDate
    5/1/1961 12:00:00 AM
  • Firstpage
    186
  • Lastpage
    192
  • Abstract
    Germanium devices, when correctly used, are capable of essentially infinite life. It was commonly assumed in early higher temperature semiconductor work that silicon devices and those of materials, such as silicon carbide and III-V compounds would have similar life expectancy. That this is not realized in soft-soldered silicon devices is now well established. Evidence is presented to show that this limitation in life is due to fatigue rupture of the soft-soldered joints when they are subjected to cyclic thermal stress. A new hard-soldered structure is described which has been proved by long experience to eliminate fatigue failure completely.
  • Keywords
    Copper; Fatigue; Joints; Junctions; Silicon; Stress;
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1961.6373099
  • Filename
    6373099