Title :
GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
Author :
Goldstein, L. ; Fortin, C. ; Starck, C. ; Plais, A. ; Jacquet, J. ; Boucart, J. ; Rocher, A. ; Poussou, C.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
fDate :
2/5/1998 12:00:00 AM
Abstract :
A high reflectivity GaAs/AlGaAs Bragg mirror (>99.7%) has been grown for the first time on InP. Dislocations present in the metamorphic material do not propagate to the active layer. The metamorphic mirror offers a promising alternative to wafer fusion for long wavelength surface-emitting lasers
Keywords :
III-V semiconductors; aluminium compounds; dislocations; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; mirrors; optical communication equipment; reflectivity; semiconductor lasers; surface emitting lasers; GaAs-AlGaAs; InP; InP substrate; dislocations; high reflectivity mirror; long wavelength VCSEL; metamorphic Bragg mirror; surface-emitting lasers; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980117
