Title :
Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrates with dynamically stable polarisation
Author :
Takahashi, M. ; Vaccaro, P. ; Egami, N. ; Mizutani, A. ; Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
ATR Adaptive Commun. Res. Labs., Kyoto, Japan
fDate :
2/5/1998 12:00:00 AM
Abstract :
An experimental investigation of dynamic lasing characteristics in oxide-confinement InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) grown on GaAs(311)A substrates is presented. A stable single polarisation mode was exhibited along the [2¯33] crystallographic direction under continuous wave (CW) operation and under high-speed direct modulation with a data rate of 1 Gbit/s
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; light polarisation; optical communication equipment; semiconductor lasers; surface emitting lasers; 1 Gbit/s; CW operation; GaAs; GaAs(311)A substrates; InGaAs-GaAs; [2¯33] crystallographic direction; continuous wave operation; dynamic lasing characteristics; dynamically stable polarisation; high-speed direct modulation; oxide-confinement VCSEL; stable single polarisation mode; surface-emitting lasers; vertical-cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980193
