• DocumentCode
    1381507
  • Title

    Sb-based monolithic VCSEL operating near 2.2 μm at room temperature

  • Author

    Baranov, A.N. ; Rouillard, Y. ; Boissier, G. ; Grech, P. ; Gaillard, Sebastien ; Alibert, C.

  • Author_Institution
    Centre d´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier
  • Volume
    34
  • Issue
    3
  • fYear
    1998
  • fDate
    2/5/1998 12:00:00 AM
  • Firstpage
    281
  • Lastpage
    282
  • Abstract
    Monolithic Sb-based vertical cavity surface emitting lasers (VCSELs) operating near 2.2 μm at room temperature have been successfully fabricated and characterised. A pulsed output optical power of 20 mW has been achieved, the threshold current density being 2 kA/cm 2 for 200 μm diameter devices. The entire structure was grown in a single growth run using molecular beam epitaxy
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor laser arrays; surface emitting lasers; 2.2 micrometre; 20 mW; 200 micron; AlSbAs-GaSb; III-V semiconductors; molecular beam epitaxy; monolithic VCSEL; pulsed output optical power; single growth run; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980142
  • Filename
    677367
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1381507