Title :
Direct extraction of all four transistor noise parameters from 50 Ω noise figure measurements
Author :
Lazaro, A. ; Pradell, L. ; Beltran, A. ; Callaghan, J. M O
Author_Institution :
Dept. de Teoria del Senyal i Comunicacions, Univ. Politecnica de Catalunya, Barcelona, Spain
fDate :
2/5/1998 12:00:00 AM
Abstract :
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22 INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources
Keywords :
equivalent circuits; high electron mobility transistors; matrix algebra; microwave transistors; semiconductor device models; semiconductor device noise; direct extraction; intrinsic noise matrix elements; matched source reflection coefficient; noise figure measurements; transistor noise parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980192
