• DocumentCode
    1381552
  • Title

    Direct extraction of all four transistor noise parameters from 50 Ω noise figure measurements

  • Author

    Lazaro, A. ; Pradell, L. ; Beltran, A. ; Callaghan, J. M O

  • Author_Institution
    Dept. de Teoria del Senyal i Comunicacions, Univ. Politecnica de Catalunya, Barcelona, Spain
  • Volume
    34
  • Issue
    3
  • fYear
    1998
  • fDate
    2/5/1998 12:00:00 AM
  • Firstpage
    289
  • Lastpage
    291
  • Abstract
    A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22 INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources
  • Keywords
    equivalent circuits; high electron mobility transistors; matrix algebra; microwave transistors; semiconductor device models; semiconductor device noise; direct extraction; intrinsic noise matrix elements; matched source reflection coefficient; noise figure measurements; transistor noise parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980192
  • Filename
    677378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1381552