DocumentCode
1381564
Title
Discrepancies obtained in transconductance extracted from pulsed I-V curves and from pulsed S-parameters in HEMTs and PHEMTs
Author
Collantes, J.M. ; Ouarch, Z. ; Chi, C.-Y. ; Sayed, M. ; Quere, R.
Author_Institution
Dept. de Electr. y Electron., Pais Vasco Univ., Bilbao, Spain
Volume
34
Issue
3
fYear
1998
fDate
2/5/1998 12:00:00 AM
Firstpage
291
Lastpage
292
Abstract
An isothermal comparison between the transconductance extracted from S-parameter measurements (gm_RF) and the transconductance derived from I-V curves (gm_IV) is performed for HEMT and PHEMT transistors. The isothermal environment is achieved by carrying out a complete pulse characterisation (pulsed I-V and pulsed S-parameters) that avoids the effects of self-heating. Results show a gm_RF that can be >40% larger than gm_IV at high Vgs voltages. Thermal effects are avoided during the pulsed characterisation, therefore this discrepancy is attributed to fast traps
Keywords
S-parameters; high electron mobility transistors; HEMT; PHEMT; isothermal measurement; parameter extraction; pulsed I-V characteristics; pulsed S-parameters; self-heating; transconductance; transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980197
Filename
677380
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