Title :
Electroabsorption modulator with PINIP structure
Author :
Yamada, K. ; Nakamura, K. ; Horikawa, H.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
2/5/1998 12:00:00 AM
Abstract :
The authors have developed an electroabsorption modulator with a p-i-n-i-p, (PINIP) structure. The applied voltage limit is extended to more than +8 V. Adjusting the voltage range enables crosspoint control and symmetrical optical eye patterns, without increasing timing jitter at the trailing edge, by reducing the pattern effect
Keywords :
electro-optical modulation; electroabsorption; optical communication equipment; 10 Gbit/s; 8 V; PINIP structure; applied voltage limit; crosspoint control; electroabsorption modulator; p-i-n-i-p structure; symmetrical optical eye patterns; timing jitter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980228
