• DocumentCode
    1381659
  • Title

    Characteristics of fully quaternary In0.52(Al0.8 Ga0.2)0.48As/In0.53(Al0.2 Ga0.8)0.47As heterostructures in doped-channel FETs

  • Author

    Lai, L.S. ; Chan, Y.-J. ; Pan, J.W. ; Chyi, J.-I.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    34
  • Issue
    3
  • fYear
    1998
  • fDate
    2/5/1998 12:00:00 AM
  • Firstpage
    308
  • Lastpage
    309
  • Abstract
    A fully quaternary In0.52(Al0.8Ga0.2 )0.48As/In0.53(Al0.2Ga0.8 )0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (g0 =0.6 mS/mm), and a high DC gain ratio (gm/g0≃350)
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor heterojunctions; 0.6 mS/mm; InAlGaAs-InP; InP; InP substrates; channel breakdown voltage; doped-channel FETs; fully quaternary heterostructures; gate-to-drain breakdown voltage; kink effect elimination;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980200
  • Filename
    677407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1381659