Title :
High performance GaN/AlGaN MODFETs grown by RF-assisted MBE
Author :
Nguyen, C. ; Nguyen, N.X. ; Le, M. ; Grider, D.E.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
2/5/1998 12:00:00 AM
Abstract :
High performance 0.25 μm gate-length GaN/AlGaN modulation doped field effect transistors grown by RF-assisted MBE on sapphire are demonstrated. A maximum drain current of 750 mA/mm, and a breakdown voltage exceeding 45 V were obtained. Small signal measurement yielded a current gain cutoff frequency of 28 GHz, and a maximum oscillation frequency of 40 GHz. The authors have achieved <5% variation in the maximum drain current across 2 in wafers. These results demonstrated the excellent potential of RF-assisted MBE in the growth of GaN-based microwave power devices for practical applications
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power HEMT; 0.25 micron; 28 GHz; 40 GHz; 45 V; Al2O3; GaN-AlGaN; GaN/AlGaN MODFETs; RF-assisted MBE; breakdown voltage; field effect transistors; microwave power devices; modulation doped FET; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980198
