Title :
Statistical Evaluation of Electromigration Reliability at Chip Level
Author :
Li, Baozhen ; McLaughlin, Paul ; Bickford, Jeanne ; Habitz, Peter ; Netrabile, Dileep ; Sullivan, Timothy
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
Chip level electromigration (EM) reliability is determined by: 1) the element level EM failure probability used for design guideline generation; and 2) the distribution of EM elements against design limits. Balancing these two factors is critical for a chip design to achieve the best performance while maintaining chip level EM reliability. This paper discusses the relationship between element level and chip level EM failure probability and provides examples of EM evaluation of chip designs.
Keywords :
electromigration; probability; reliability; chip level electromigration reliability; element level EM failure probability; statistical evaluation; Chip design; electromigration (EM); interconnects; statistical budgeting;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2010.2093526