Title :
Numerical device modeling for electronic circuit simulation
Author :
Yanilmaz, Mehmet ; Eveleigh, Virgil
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Numerical MOSFET modeling based on multidimensional Bernstein interpolation is presented as a means to improve simulation efficiency. Device operating-point information is extracted from prestored table values using functional reconstruction during transient simulation. The formulation of the numerical model conforms to the requirements of electronic circuit simulators which use the Newtonian-Raphson algorithm to solve the algebraic differential circuit equations. This Bernstein approximation technique is extended to multidimension variation diminishing interpolation and applied to DC current and intrinsic charge modeling of MOSFETs. The implementation of the numerical model is described, and experimental results based on the simulation of benchmark circuits are provided
Keywords :
MOS integrated circuits; circuit CAD; insulated gate field effect transistors; interpolation; semiconductor device models; Bernstein approximation technique; DC current; MOSFET modeling; Newtonian-Raphson algorithm; algebraic differential circuit equations; benchmark circuits; electronic circuit simulators; functional reconstruction; intrinsic charge modeling; multidimension variation diminishing interpolation; multidimensional Bernstein interpolation; numerical model; operating-point information; prestored table values; simulation efficiency; transient simulation; Analytical models; Circuit simulation; Computational modeling; Electronic circuits; Equations; Helium; Interpolation; MOSFET circuits; Numerical models; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
