Modeling and simulation of monolithic integration of rectifiers for solid state lighting applications

In this paper, a design methodology for modelling and simulation of monolithic integration of low power rectifier for solid state lighting application is presented. The power conversion is built based on Schottky diode fabricated in a standard BiCMOS process. The process simulation is done by using TSUPREME4 to study the doping profiles and junction depth of the standard BiCMOS fabrication steps. The modelling and design of the Schottky diode for rectifier design is then made with inputs from the process simulation tool. COMSOL Multiphysics environment is used to couple both semiconductor module and circuit analysis steps. The simulated IV characteristics of the Schottky diode are used to build the SPICE model parameters of the fabricated device. A model for monolithically integrated rectifier application and analysis is presented and analysed.