DocumentCode :
1382284
Title :
Feedforward Neural Network Trained by BFGS Algorithm for Modeling Plasma Etching of Silicon Carbide
Author :
Xia, Jing-Hua ; Rusli ; Kumta, Amit S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
38
Issue :
2
fYear :
2010
Firstpage :
142
Lastpage :
148
Abstract :
Electron cyclotron resonance (ECR) plasma etching of silicon carbide is numerically modeled by a feedforward neural network (FNN), which is trained by the Broyden, Fletcher, Goldfarb, and Shanno (BFGS) optimization algorithm and the conventional backpropagation (BP) algorithm. The training samples are obtained from our experimental results, which meet the requirement of Box-Wilson central-composite-designed experimental test design. By using the samples, the BFGS algorithm is compared with the conventional BP algorithm with different hidden neuron numbers, different number of iterations and various learning rates. It is shown that the BFGS algorithm requires less hidden neurons and less iteration to obtain the same training results, and it also provides much smaller cross-validation errors. Therefore, the FNN trained by the BFGS algorithm possesses much better approximation and generalization ability. The silicon carbide ECR process modeling results demonstrate that the FNN trained by the BFGS algorithm are fast, reliable, and accurate.
Keywords :
backpropagation; cyclotron resonance; feedforward neural nets; learning (artificial intelligence); optimisation; production engineering computing; semiconductor industry; sputter etching; BFGS optimization algorithm; Broyden-Fletcher-Goldfarb-Shanno algorithm; ECR plasma etching; SiC; backpropagation algorithm; electron cyclotron resonance; feedforward neural network; silicon carbide; Backpropagation (BP); Broyden, Fletcher, Goldfarb, and Shanno (BFGS); electron cyclotron resonance (ECR); modeling; neural network; plasma etching; silicon carbide (SiC);
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2009.2037151
Filename :
5382572
Link To Document :
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