Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-μm wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Ωcm² and a room temperature peak responsivity of 0.8 A/W (at 2 μm) with an estimated maximum detectivity (D*) of ~3.8×10¹⁰ cm Hz^1/2 W^-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.