Title :
Active Snubber Energy Recovery Circuit for Series-Connected IGBTs
Author :
Lim, Tee C. ; Williams, Barry W. ; Finney, Stephen J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Strathclyde, Glasgow, UK
fDate :
7/1/2011 12:00:00 AM
Abstract :
This paper presents a novel active snubber recovery circuit for series-connected insulated gate bipolar transistors (IGBTs). The proposed technique allows turnon and turnoff switching of the series IGBTs to be controlled and balanced through conventional snubber effects, but the configuration includes active circuitry to recover into the dc supply, the stored snubber energy. Detailed waveform analysis and associated mathematical equations are presented, supported by PSpice simulations. The proposed technique is practically demonstrated, at a scaled power level, on a single IGBT to illustrate the control concept and on three series-connected IGBTs to demonstrate dynamic voltage sharing.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; snubbers; PSpice simulations; active snubber energy recovery circuit; dynamic voltage sharing; mathematical equations; series-connected IGBT; series-connected insulated gate bipolar transistors; three series-connected IGBT; waveform analysis; Insulated gate bipolar transistors; Logic gates; Snubbers; Switches; Threshold voltage; Voltage control; Active snubber circuit; energy recovery; insulated gate bipolar transistor (IGBT); series connection;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2010.2093539