Title :
Development of Monte Carlo Modeling for Neutron-Induced Failures of Trench FieldStop IGBT
Author :
Foro, L.L. ; Touboul, A.D. ; Wrobel, F. ; Saigné, F.
Author_Institution :
IES, Univ. Montpellier II, Montpellier, France
Abstract :
Based on experimental results under neutron beam and on analysis using Monte Carlo simulation, we show that the sensitivity to SEB/SEL of Trench Gate Fieldstop IGBT can be modeled by an RPP assumption. The minimum critical charge for triggering a destructive single event on a Trench Gate Fieldstop IGBT is found to be about 90 fC.
Keywords :
Monte Carlo methods; insulated gate bipolar transistors; neutron effects; semiconductor process modelling; Monte Carlo modeling; Monte Carlo simulation; RPP assumption; destructive single event; minimum critical charge; neutron beam; neutron-induced failures; trench gate fieldstop IGBT; Doping; Insulated gate bipolar transistors; Logic gates; Monte Carlo methods; Neutrons; Sensitivity; Atmospheric neutrons; MC-ORACLE; critical charge; cross sections; insulated gate bipolar transistor (IGBT); rectangular parallelepiped model (RPP); sensitive volume; space charge region (SCR); trench gate fieldstop;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2172631
