• DocumentCode
    1382500
  • Title

    Development of Monte Carlo Modeling for Neutron-Induced Failures of Trench FieldStop IGBT

  • Author

    Foro, L.L. ; Touboul, A.D. ; Wrobel, F. ; Saigné, F.

  • Author_Institution
    IES, Univ. Montpellier II, Montpellier, France
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2748
  • Lastpage
    2754
  • Abstract
    Based on experimental results under neutron beam and on analysis using Monte Carlo simulation, we show that the sensitivity to SEB/SEL of Trench Gate Fieldstop IGBT can be modeled by an RPP assumption. The minimum critical charge for triggering a destructive single event on a Trench Gate Fieldstop IGBT is found to be about 90 fC.
  • Keywords
    Monte Carlo methods; insulated gate bipolar transistors; neutron effects; semiconductor process modelling; Monte Carlo modeling; Monte Carlo simulation; RPP assumption; destructive single event; minimum critical charge; neutron beam; neutron-induced failures; trench gate fieldstop IGBT; Doping; Insulated gate bipolar transistors; Logic gates; Monte Carlo methods; Neutrons; Sensitivity; Atmospheric neutrons; MC-ORACLE; critical charge; cross sections; insulated gate bipolar transistor (IGBT); rectangular parallelepiped model (RPP); sensitive volume; space charge region (SCR); trench gate fieldstop;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2172631
  • Filename
    6086741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1382500