DocumentCode
1382529
Title
Including Radiation Effects and Dependencies on Process-Related Variability in Advanced Foundry SPICE Models Using a New Physical Model and Parameter Extraction Approach
Author
Li, M. ; Li, Y.F. ; Wu, Y.J. ; Cai, S. ; Zhu, N.Y. ; Rezzak, N. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Wang, J.Q. ; Cheng, X.X. ; Wang, Y. ; Wang, D.L. ; Hao, Y.
Author_Institution
Accelicon Technol., Inc., Cupertino, CA, USA
Volume
58
Issue
6
fYear
2011
Firstpage
2876
Lastpage
2882
Abstract
An automated flow is described for total-ionizing dose (TID)-aware SPICE model generation that includes TID response and its dependence on process variability and layout. A memetic algorithm that balances multiple objectives, subject to realistic constraints, is introduced for global optimization of the flow. A differential evolution algorithm is adapted for global exploration, and a modified random pattern search strategy is introduced for local exploitation. The optimizer efficiently reduces the value of different kinds of objective functions in the extraction at reasonable cost and avoids premature convergence in most practical cases. The model is implemented in Verilog-A, can be applied to all foundry model formats, and supports all popular SPICE simulators. To validate the flow, simulations from models extracted from specific targets are compared with measured current-voltage characteristics under various irradiation conditions for 0.35 μm, 0.18 μm, and 90 nm bulk CMOS processes.
Keywords
CMOS integrated circuits; SPICE; optimisation; radiation effects; semiconductor process modelling; SPICE simulators; Verilog-A; advanced foundry SPICE models; automated flow; bulk CMOS processes; current-voltage characteristics; differential evolution algorithm; global flow optimization; irradiation conditions; memetic algorithm; modified random pattern search strategy; multiple objectives; objective functions; parameter extraction approach; physical model; process layout; process-related variability; radiation effects; realistic constraints; size 0.18 mum; size 0.35 mum; size 90 nm; total-ionizing dose-aware SPICE model generation; total-ionizing doseresponse; Foundries; Load modeling; Mathematical model; Radiation effects; SPICE; Semiconductor device modeling; Vectors; Process variability; SPICE model; radiation effects; retargeting; total ionizing dose (TID);
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2171503
Filename
6086745
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