• DocumentCode
    1382529
  • Title

    Including Radiation Effects and Dependencies on Process-Related Variability in Advanced Foundry SPICE Models Using a New Physical Model and Parameter Extraction Approach

  • Author

    Li, M. ; Li, Y.F. ; Wu, Y.J. ; Cai, S. ; Zhu, N.Y. ; Rezzak, N. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Wang, J.Q. ; Cheng, X.X. ; Wang, Y. ; Wang, D.L. ; Hao, Y.

  • Author_Institution
    Accelicon Technol., Inc., Cupertino, CA, USA
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2876
  • Lastpage
    2882
  • Abstract
    An automated flow is described for total-ionizing dose (TID)-aware SPICE model generation that includes TID response and its dependence on process variability and layout. A memetic algorithm that balances multiple objectives, subject to realistic constraints, is introduced for global optimization of the flow. A differential evolution algorithm is adapted for global exploration, and a modified random pattern search strategy is introduced for local exploitation. The optimizer efficiently reduces the value of different kinds of objective functions in the extraction at reasonable cost and avoids premature convergence in most practical cases. The model is implemented in Verilog-A, can be applied to all foundry model formats, and supports all popular SPICE simulators. To validate the flow, simulations from models extracted from specific targets are compared with measured current-voltage characteristics under various irradiation conditions for 0.35 μm, 0.18 μm, and 90 nm bulk CMOS processes.
  • Keywords
    CMOS integrated circuits; SPICE; optimisation; radiation effects; semiconductor process modelling; SPICE simulators; Verilog-A; advanced foundry SPICE models; automated flow; bulk CMOS processes; current-voltage characteristics; differential evolution algorithm; global flow optimization; irradiation conditions; memetic algorithm; modified random pattern search strategy; multiple objectives; objective functions; parameter extraction approach; physical model; process layout; process-related variability; radiation effects; realistic constraints; size 0.18 mum; size 0.35 mum; size 90 nm; total-ionizing dose-aware SPICE model generation; total-ionizing doseresponse; Foundries; Load modeling; Mathematical model; Radiation effects; SPICE; Semiconductor device modeling; Vectors; Process variability; SPICE model; radiation effects; retargeting; total ionizing dose (TID);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2171503
  • Filename
    6086745