Simulation for statistical variability in realistic 20nm MOSFET

Author

Liping Wang ; Brown, A.R. ; Millar, C. ; Burenkov, Alex ; Xingsheng Wang ; Asenov, Asen ; Lorenz, Juergen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2014

fDate

7-9 April 2014

Firstpage

5

Lastpage

8

Abstract

In order to enable the simulation of statistical variability simulation in non-ideal device structures which arise from complex patterning steps, the GSS atomistic simulator, GARAND, has been enhanced for handling arbitrary 3D device geometries, and a structure translation tool MONOLITH has been developed to transfer the information about the device geometry, material composition and doping distribution into an intermediate structure and file format which can then be imported by GARAND. Statistical simulations on an example of a 20nm bulk Silicon MOSFET with STI are demonstrated.

Keywords

MOSFET; statistical analysis; GARAND; GSS atomistic simulator; MONOLITH structure translation tool; STI; arbitrary 3D device geometry; bulk silicon MOSFET; complex patterning steps; material composition; nonideal device structures; realistic MOSFET; size 20 nm; statistical simulations; statistical variability simulation; Doping; Geometry; MOSFET; Semiconductor process modeling; Solid modeling; Standards; Three-dimensional displays; MOSFET; TCAD; statistical variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on

Conference_Location

Stockholm

Type

conf

DOI

10.1109/ULIS.2014.6813892

Filename

6813892