Title :
The impact of interface states on the mobility and the drive current of III-V MOSFETs
Author :
Osgnach, Patrik ; Caruso, E. ; Lizzit, Daniel ; Palestri, Pierpaolo ; Esseni, David ; Selmi, Luca
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
Abstract :
We investigate the effect of interface states at the channel/insulator interface of III-V MOSFETs by means of accurate Schrödinger-Poisson and Multi-subband Monte Carlo simulations. Traps in the conduction band are found to be the main responsible of the Fermi level pinning observed in the experiments. These traps impact the mobility measurements as well as the current drive of short channel devices.
Keywords :
Fermi level; III-V semiconductors; MOSFET; Monte Carlo methods; Poisson equation; Schrodinger equation; conduction bands; interface states; Fermi level pinning; III-V MOSFETs; Schrödinger-Poisson simulations; conduction band; drive current; interface state effect; mobility measurements; multisubband Monte Carlo simulations; short channel devices; Hall effect; Interface states; Logic gates; Rough surfaces; Scattering; Surface roughness;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location :
Stockholm
DOI :
10.1109/ULIS.2014.6813896
