Continuous semiempirical model for the current-voltage characteristics of tunnel fets

Author

Hao Lu ; Jung Whan Kim ; Esseni, David ; Seabaugh, Alan

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2014

fDate

7-9 April 2014

Firstpage

25

Lastpage

28

Abstract

A simple analytic model based on the Kane-Sze formula is proposed to describe the current-voltage characteristics of tunnel field-effect transistors (TFETs). This model captures the unique features of the TFET including the decrease in subthreshold swing with drain current and the superlinear onset of the output characteristic. The model has fairly general validity and is not specific to a particular TFET geometry. Good agreement is shown with published atomistic simulations of an InAs double-gate TFET with gate perpendicular to the tunnel junction and with numerical simulations of a broken-gap AlGaSb/InAs TFET with gate in parallel with the tunnel junction.

Keywords

aluminium compounds; field effect transistors; gallium compounds; indium compounds; semiconductor device models; tunnel transistors; AlGaSb-InAs; Kane-Sze formula; TFET geometry; atomistic simulations; continuous semiempirical model; current-voltage characteristics; drain current; numerical simulations; simple analytic model; subthreshold swing; superlinear onset; tunnel field-effect transistors; tunnel junction; Integrated circuit modeling; Junctions; Logic gates; Mathematical model; Numerical models; Tunneling; Band-to-band tunneling; compact model; tunnel field-effect transistor (TFET); tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on

Conference_Location

Stockholm

Type

conf

DOI

10.1109/ULIS.2014.6813897

Filename

6813897