Title :
Continuous semiempirical model for the current-voltage characteristics of tunnel fets
Author :
Hao Lu ; Jung Whan Kim ; Esseni, David ; Seabaugh, Alan
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
A simple analytic model based on the Kane-Sze formula is proposed to describe the current-voltage characteristics of tunnel field-effect transistors (TFETs). This model captures the unique features of the TFET including the decrease in subthreshold swing with drain current and the superlinear onset of the output characteristic. The model has fairly general validity and is not specific to a particular TFET geometry. Good agreement is shown with published atomistic simulations of an InAs double-gate TFET with gate perpendicular to the tunnel junction and with numerical simulations of a broken-gap AlGaSb/InAs TFET with gate in parallel with the tunnel junction.
Keywords :
aluminium compounds; field effect transistors; gallium compounds; indium compounds; semiconductor device models; tunnel transistors; AlGaSb-InAs; Kane-Sze formula; TFET geometry; atomistic simulations; continuous semiempirical model; current-voltage characteristics; drain current; numerical simulations; simple analytic model; subthreshold swing; superlinear onset; tunnel field-effect transistors; tunnel junction; Integrated circuit modeling; Junctions; Logic gates; Mathematical model; Numerical models; Tunneling; Band-to-band tunneling; compact model; tunnel field-effect transistor (TFET); tunneling;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on
Conference_Location :
Stockholm
DOI :
10.1109/ULIS.2014.6813897
